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| AEGIS SEMICONDUTORES LTDA. A5N:1500.XXH VOLTAGE RATINGS Part Number A5N:1500.02H A5N:1500.04H A5N:1500.06H A5N:1500.08H A5N:1500.10H A5N:1500.12H A5N:1500.14H A5N:1500.16H VRRM , VR (V) Max. rep. peak reverse voltage TJ = 0 to 125 OC 200 400 600 800 1000 1200 1400 1600 TJ = -40 to 0 C 200 400 600 800 1000 1200 1400 1600 O VRSM , VR (V) Max. nonrep. peak reverse voltage TJ = 25 to 125 C 300 500 700 900 1100 1300 1500 1700 O MAXIMUM ALLOWABLE RATINGS PARAMETER TJ Junction Temperature Tstg Storage Temperature IT(AV) Max. Av. current @ Max. TC VALUE -40 to 125 -40 to 150 1500 75 2350 28.14 ITSM Max. Peak non-rep. surge current 30.67 kA 32.11 35.00 4121 4492 I2t Max. I2t capability 4702 5125 I2t1/2 Max. I2t1/2 capability di/dt Max. Non-repetitive rate-ofrise current PGM Max. Peak gate power PG(AV) Max. Av. gate power +IGM Max. Peak gate current -VGM Max. Peak negative gate voltage F Mounting Force 56150 kA2s1/2 A/ms W W mA V N.m tp < 5 ms kA2s t = 10ms t = 8.3 ms Initial T J = 125O C, no voltage applied after surge. 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms Initial T J = 125O C, rated VRRM applied after surge. Initial T J = 125OC, no voltage applied after surge. UNITS O O NOTES 180O half sine wave 50 Hz half cycle sine wave 60 Hz half cycle sine wave Initial T J = 125OC, rated VRRM applied after surge. C C C A O IT(RMS) Nom. RMS current A Initial T J = 125OC, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). TJ = 125 O VD = VDRM, ITM = 1600A. Gate pulse: 20V, 20 W, C, 10ms, 0.5ms rise time, Max. repetitive di/dt is aproximately 40% of non-repetitive value. tp < 5 ms - 800 16 3 150 2 2500 AEGIS SEMICONDUTORES LTDA. A5N:1500.XXH CHARACTERISTICS PARAMETER VTM peak on-state voltage VT(TO) Threshold voltage rT Slope resistance IL Latching current IH Holding current td Delay time tq Turn-off time dv/dt Critical rate-of-rise of off-state voltage IRM, IDM Peak reverse and offstate current IGT DC gate current to trigger VGT DC gate voltage to trigger VGD DC gate voltage not to trigger RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------6 3 ------------TYP. ----------0.7 ----50 ------------------425(15.5) A-24 MAX. UNITS 1.61 0.904 0.158 400 500 1 100 V V mW mA mA ms ms TEST CONDITIONS Initial T J = 25O C, 50-60Hz half sine, Ipeak =4712A. TJ = 125O C Av. power = V T(TO) * IT(AV) +rT * [IT(RMS)]2, 180 Half Sine. Use low values for ITM < p rated IT(AV) TC = 125OC, 12V anode. Gate pulse: 10V, 20 W, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25OC, VD = VDRM, 50A resistive load. Gate pulse: 10V, 20W, 10ms, 1ms rise time. TJ = 125OC, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125 OC, Exp. To 67% V DRM, gate open. TJ = 125O C, Rated VRRM and VDRM, gate open. TC = -40OC TC = 25OC TC = -40OC +12V anode-to-cathode. For recommended gate drive see "Gate Characteristics" figure. O 1000 V/ms 100 400 200 ----0.3 0.023 0.026 0.027 0.01 --mA mA V TC = 25OC TC = 25OC, Max. Value which will not trigger with rated VDRM V anode. O C/W DC operation, double side cooled. O O C/W 180 sine wave, double side cooled. O O C/W 120 rectangular wave, double side cooled. O C/W Mtg. Surface smooth, flat and greased. Double side cooled. ----- g(oz.) JEDEC Maximum Allowable Case Temperature 125 125 Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 70 *Rectangular waveform 30 60 90 120 DC 180 Maximum Allowable Case Temperature (C) 120 115 110 105 100 95 90 85 80 75 180 30 60 90 120 70 0 *Sinusoidal waveform 500 1000 1500 0 500 1000 1500 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics AEGIS SEMICONDUTORES LTDA. A5N:1500.XXH 16000 Maximum Average Forward Power Loss 30 Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W) 14000 12000 10000 60 Maximum Average Forward Power Loss (W) 14000 30 12000 10000 8000 6000 4000 2000 0 0 *Rectangular waveform 8000 6000 4000 2000 0 0 *Sinusoidal waveform 90 120 180 60 90 120 180 DC 500 1000 1500 2000 2500 500 1000 1500 2000 2500 Average Forward Current (A) Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Forward Voltage Drop 10000 Fig. 4 - Forward Power Loss Characteristics Transient Thermal Impedance ZthJC 10-1 Transient Thermal Impedance ZthJC (C/W) Instantaneous Forward Current (A) 10-2 1000 125C 25C 100 0.5 1.0 1.5 2.0 2.5 3.0 10-3 10-3 10-2 10-1 100 101 Instantaneous Forward Voltage (V) Time (s) Fig. 5 - Forward Voltage Drop Characteristics Fig. 6 - Transient Thermal Impedance Characteristics AEGIS SEMICONDUTORES LTDA. A5N:1500.XXH 100 Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 10W; tr<=1ms. b)Recommended load line for <=30% rated di/dt: 10V, 10W; tr<=1ms. Gate Characteristics (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms Instantaneous Gate Voltage (V) 10 (b) (a) TJ = -40C T = 25C 1 TJ = 125C (1) (2) (3) VGD IGD 0.1 1E-3 Frequency Limited by PG(Av) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 7 - Gate Trigger Characteristics A-24 Fig. 8 - Outline Characteristics |
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